| FDC6420C ON Semiconductor | Transistors-FETs, MOSFETs - Arrays MOSFET N/P-CH 20V 3A/2.2A SSOT-6 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerTrench®
- FET Type : N and P-Channel
- FET Feature : Logic Level Gate
- Drain to Source Voltage (Vdss) : 20V
- Current - Continuous Drain (Id) @ 25°C : 3A, 2.2A
- Rds On (Max) @ Id, Vgs : 70mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id : 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 4.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds : 324pF @ 10V
- Power - Max : 700mW
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package : SuperSOT™-6
- part_number_key_clear : FDC6420C
| 58997 More on Order |
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| IRF9540PBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 19A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 200mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 61nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
- Power Dissipation (Max) : 150W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
- part_number_key_clear : IRF9540PBF
| 3850 More on Order |
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| IRF2807PBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 82A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 82A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 13mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 3820pF @ 25V
- Power Dissipation (Max) : 230W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
- part_number_key_clear : IRF2807PBF
| 2191 More on Order |
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| NSS30100LT1G ON Semiconductor | Transistors-Bipolar (BJT) - Single TRANS PNP 30V 1A SOT-23 - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP
- Current - Collector (Ic) (Max) : 1A
- Voltage - Collector Emitter Breakdown (Max) : 30V
- Vce Saturation (Max) @ Ib, Ic : 650mV @ 200mA, 2A
- Current - Collector Cutoff (Max) : 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 500mA, 2V
- Power - Max : 310mW
- Frequency - Transition : 100MHz
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : SOT-23-3 (TO-236)
- part_number_key_clear : NSS30100LT1G
| 4689 More on Order |
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| QSZ2TR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays TRANS NPN/PNP 30V 1.5A 5TSMT - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : NPN, PNP (Emitter Coupled)
- Current - Collector (Ic) (Max) : 1.5A
- Voltage - Collector Emitter Breakdown (Max) : 30V
- Vce Saturation (Max) @ Ib, Ic : 350mV @ 50mA, 1A / 370mV @ 50mA, 1A
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 270 @ 100mA, 2V
- Power - Max : 1.25W
- Frequency - Transition : 300MHz, 280MHz
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : SOT-23-5 Thin, TSOT-23-5
- Supplier Device Package : TSMT5
- part_number_key_clear : QSZ2TR
| 151 More on Order |
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| SCT3080KLGC11 Rohm Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET NCH 1.2KV 31A TO247N - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss) : 1200V
- Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 18V
- Rds On (Max) @ Id, Vgs : 104mOhm @ 10A, 18V
- Vgs(th) (Max) @ Id : 5.6V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs : 60nC @ 18V
- Vgs (Max) : +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds : 785pF @ 800V
- Power Dissipation (Max) : 165W (Tc)
- Operating Temperature : 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247N
- Package / Case : TO-247-3
- part_number_key_clear : SCT3080KLGC11
| 3550 More on Order |
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| IKW15N120T2FKSA1 Infineon Technologies | Transistors-IGBTs - Single IGBT 1200V 30A 235W TO247-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchStop®
- IGBT Type : Trench
- Voltage - Collector Emitter Breakdown (Max) : 1200V
- Current - Collector (Ic) (Max) : 30A
- Current - Collector Pulsed (Icm) : 60A
- Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 15A
- Power - Max : 235W
- Switching Energy : 2.05mJ
- Input Type : Standard
- Gate Charge : 93nC
- Td (on/off) @ 25°C : 32ns/362ns
- Test Condition : 600V, 15A, 41.8Ohm, 15V
- Reverse Recovery Time (trr) : 300ns
- Operating Temperature : -40°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Package / Case : TO-247-3
- Supplier Device Package : PG-TO247-3
- part_number_key_clear : IKW15N120T2FKSA1
| 392 More on Order |
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| IKW25T120FKSA1 Infineon Technologies | Transistors-IGBTs - Single IGBT 1200V 50A 190W TO247-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchStop®
- IGBT Type : NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) : 1200V
- Current - Collector (Ic) (Max) : 50A
- Current - Collector Pulsed (Icm) : 75A
- Vce(on) (Max) @ Vge, Ic : 2.2V @ 15V, 25A
- Power - Max : 190W
- Switching Energy : 4.2mJ
- Input Type : Standard
- Gate Charge : 155nC
- Td (on/off) @ 25°C : 50ns/560ns
- Test Condition : 600V, 25A, 22Ohm, 15V
- Reverse Recovery Time (trr) : 200ns
- Operating Temperature : -40°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Package / Case : TO-247-3
- Supplier Device Package : PG-TO247-3
- part_number_key_clear : IKW25T120FKSA1
| 562 More on Order |
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| BCV61C,215 Nexperia | Transistors-Special Purpose TRANS NPN 30V 100MA DUAL SOT143B - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN (Dual) Current Mirror
- Applications : Current Mirror
- Voltage - Rated : 30V
- Current Rating (Amps) : 100mA
- Mounting Type : Surface Mount
- Package / Case : TO-253-4, TO-253AA
- Supplier Device Package : SOT-143B
- part_number_key_clear : BCV61C215
| 4003 More on Order |
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| BCV62B,215 Nexperia | Transistors-Special Purpose TRANS PNP 30V 100MA DUAL SOT143B - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP (Dual) Current Mirror
- Applications : Current Mirror
- Voltage - Rated : 30V
- Current Rating (Amps) : 100mA
- Mounting Type : Surface Mount
- Package / Case : TO-253-4, TO-253AA
- Supplier Device Package : SOT-143B
- part_number_key_clear : BCV62B215
| 449 More on Order |
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| BSP51,115 Nexperia | Transistors-Bipolar (BJT) - Single TRANS NPN DARL 60V 1A SOT223 - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : Automotive, AEC-Q101
- Transistor Type : NPN - Darlington
- Current - Collector (Ic) (Max) : 1A
- Voltage - Collector Emitter Breakdown (Max) : 60V
- Vce Saturation (Max) @ Ib, Ic : 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max) : 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 2000 @ 500mA, 10V
- Power - Max : 1.25W
- Frequency - Transition : 200MHz
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-261-4, TO-261AA
- Supplier Device Package : SC-73
- part_number_key_clear : BSP51115
| 389 More on Order |
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| STW4N150 STMicroelectronics | Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 4A TO-247 - Manufacturer : STMicroelectronics
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerMESH™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 1500V
- Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id : 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
- Power Dissipation (Max) : 160W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247-3
- Package / Case : TO-247-3
- part_number_key_clear : STW4N150
| 3635 More on Order |
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| SGP15N60XKSA1 Infineon Technologies | Transistors-IGBTs - Single IGBT 600V 31A 139W TO220-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- IGBT Type : NPT
- Voltage - Collector Emitter Breakdown (Max) : 600V
- Current - Collector (Ic) (Max) : 31A
- Current - Collector Pulsed (Icm) : 62A
- Vce(on) (Max) @ Vge, Ic : 2.4V @ 15V, 15A
- Power - Max : 139W
- Switching Energy : 570µJ
- Input Type : Standard
- Gate Charge : 76nC
- Td (on/off) @ 25°C : 32ns/234ns
- Test Condition : 400V, 15A, 21Ohm, 15V
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Package / Case : TO-220-3
- Supplier Device Package : PG-TO220-3
- part_number_key_clear : SGP15N60XKSA1
| 450 More on Order |
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| NDS8410 Texas Instruments | Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8-SOIC - Manufacturer : Texas Instruments
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 15mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V
- Vgs (Max) : 20V
- Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 15V
- Power Dissipation (Max) : 2.5W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-SOIC
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
- part_number_key_clear : NDS8410
| 456 More on Order |
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| NTMD5838NLR2G ON Semiconductor | Transistors-FETs, MOSFETs - Arrays MOSFET 2N-CH 40V 7.4A 8SOIC - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : 2 N-Channel (Dual)
- FET Feature : Logic Level Gate
- Drain to Source Voltage (Vdss) : 40V
- Current - Continuous Drain (Id) @ 25°C : 7.4A
- Rds On (Max) @ Id, Vgs : 25mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds : 785pF @ 20V
- Power - Max : 2.1W
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package : 8-SOIC
- part_number_key_clear : NTMD5838NLR2G
| 194 More on Order |
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| ZXM64P03XTA Diodes Incorporated | Transistors-FETs, MOSFETs - Single MOSFET P-CH 30V 3.8A 8-MSOP - Manufacturer : Diodes Incorporated
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 30V
- Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 75mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id : 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 825pF @ 25V
- Power Dissipation (Max) : 1.1W (Ta)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : 8-MSOP
- Package / Case : 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- part_number_key_clear : ZXM64P03XTA
| 2940 More on Order |
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| STH3N150-2 STMicroelectronics | Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A H2PAK-2 - Manufacturer : STMicroelectronics
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerMESH™
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 1500V
- Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 9Ohm @ 1.3A, 10V
- Vgs(th) (Max) @ Id : 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 29.3nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 939pF @ 25V
- Power Dissipation (Max) : 140W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : H²PAK
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab) Variant
- part_number_key_clear : STH3N1502
| 7797 More on Order |
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| PBSS5240T,215 Nexperia | Transistors-Bipolar (BJT) - Single TRANS PNP 40V 2A SOT23 - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : PNP
- Current - Collector (Ic) (Max) : 2A
- Voltage - Collector Emitter Breakdown (Max) : 40V
- Vce Saturation (Max) @ Ib, Ic : 350mV @ 200mA, 2A
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 210 @ 1A, 2V
- Power - Max : 480mW
- Frequency - Transition : 200MHz
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Supplier Device Package : TO-236AB
- part_number_key_clear : PBSS5240T215
| 3637 More on Order |
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| IRF1407PBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 75V
- Current - Continuous Drain (Id) @ 25°C : 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 7.8mOhm @ 78A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 250nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 5600pF @ 25V
- Power Dissipation (Max) : 330W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
- part_number_key_clear : IRF1407PBF
| 2668 More on Order |
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| IRF9Z34NPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 19A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 100mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V
- Power Dissipation (Max) : 68W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
- part_number_key_clear : IRF9Z34NPBF
| 18756 More on Order |
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