Transistors

Showing 1-20 of 64,471 items.

Part Number	Description	In Stock
SGT70N65FDM1P7 Hangzhou Silan Microelectronics	Transistors-IGBTs - Single 70A, 650V N-channel Field Stop IGBT, optimized for induction Heating, UPS, SMPS and PFC applications, featuring low conduction loss and fast switching. Manufacturer : Hangzhou Silan Microelectronics Technology Category : Discrete Semiconductor Products Package : TO-247-3L Type : N-channel V(BR)CES (Collector to Emitter Breakdown Voltage) : 650V VGE (Gate to Emitter Voltage) : ±20V IC (Collector Current) @25°C : 140A IC (Collector Current) @100°C : 70A ICM (Pulsed Collector Current) : 210A PD (Power Dissipation) @25°C : 321W TJ (Operating Junction Temperature) : -55°C ~ +150°C Tstg (Storage Temperature Range) : -55°C ~ +150°C VCE(sat) (Collector to Emitter Saturation Voltage) @25°C : 2.3V (Typical) VCE(sat) (Collector to Emitter Saturation Voltage) @125°C : 2.6V (Typical) VGE(th) (Gate Threshold Voltage) : 5.0V (Typical) ICES (Collector Cut-off Current) : 200μA (Max) IGES (Gate Leakage Current) : ±400nA (Max) Cies (Input Capacitance) : 2850pF (Typical) Coes (Output Capacitance) : 294pF (Typical) Cres (Reverse Transfer Capacitance) : 85pF (Typical) td(on) (Turn-On Delay Time) : 40ns (Typical) tr (Rise Time) : 171ns (Typical) td(off) (Turn-Off Delay Time) : 211ns (Typical) tf (Fall Time) : 141ns (Typical) Eon (Turn-On Switching Loss) : 4.9mJ (Typical) Eoff (Turn-Off Switching Loss) : 2.5mJ (Typical) Ets (Total Switching Loss) : 7.4mJ (Typical) Qg (Total Gate Charge) : 189nC (Typical) Qge (Gate to Emitter Charge) : 28nC (Typical) Qgc (Gate to Collector Charge) : 107nC (Typical) FRD Forward Voltage @25°C : 1.8V (Typical) FRD Forward Voltage @125°C : 1.5V (Typical) trr (Reverse Recovery Time) : 50ns (Typical) Qrr (Reverse Recovery Charge) : 140nC (Typical) Thermal Resistance, Junction to Case (IGBT) : 0.39°C/W Thermal Resistance, Junction to Case (FRD) : 1.10°C/W Thermal Resistance, Junction to Ambient : 40°C/W	1200 More on Order
STP8N120K5 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1200V 8A TO-220 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : MDmesh™ K5 FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1200V Current - Continuous Drain (Id) @ 25°C : 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id : 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 13.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds : 505pF @ 100V Power Dissipation (Max) : 130W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220 Package / Case : TO-220-3	1876 More on Order
S8050 J3Y(RANGE:200-350) JSCJ	Transistors-Bipolar (BJT) - Single TRANS NPN 25V 0.5A SOT-23 lcsc_productCode : C2146 Manufacturer : JSCJ Package / Case : SOT-23 Supplier Device Package : SOT-23 Series : Discrete Semiconductors	109960 More on Order
CRST041N08N CRMICRO	Transistors-FETs, MOSFETs - RF MOSFET N-CH 85V 120A TO-220 lcsc_productCode : C455304 Manufacturer : CRMICRO Package / Case : TO-220 Supplier Device Package : TO-220 Series : Discrete Semiconductors	145 More on Order
ZXMP10A18GTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 2.6A SOT223 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 2.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 6V, 10V Rds On (Max) @ Id, Vgs : 150mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 26.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1055pF @ 50V Power Dissipation (Max) : 2W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA	44512 More on Order
NCEP15T14 NCE	Transistors-FETs, MOSFETs - RF MOSFET N-CH 150V 140A TO-220-3L lcsc_productCode : C341726 Manufacturer : NCE Package / Case : TO-220-3L Supplier Device Package : TO-220-3L Series : Discrete Semiconductors	1642 More on Order
CRG40T60AN3H CRMICRO	Transistors-IGBTs - Single IGBT 600V 40A 280W Through Hole TO-3PN lcsc_productCode : C2895727 Manufacturer : CRMICRO Package / Case : TO-3PN Supplier Device Package : TO-3PN Series : Discrete Semiconductors	482 More on Order
CRG60T60AN3H CRMICRO	Transistors-IGBTs - Single 403W 600V FS (Field Stop) TO-3PN Single IGBTs RoHS lcsc_productCode : C2887246 Manufacturer : CRMICRO Package / Case : TO-3PN Supplier Device Package : TO-3PN Series : Discrete Semiconductors	844 More on Order
CMH24N50 Cmos	Transistors-FETs, MOSFETs - RF MOSFET N-CH 500V 24A TO-247 lcsc_productCode : C5203946 Manufacturer : Cmos Package / Case : TO-247 Supplier Device Package : TO-247 Series : Discrete Semiconductors	26 More on Order
CS25N50ANR CRMICRO	Transistors-FETs, MOSFETs - RF MOSFET N-CH 500V 25A TO-3P lcsc_productCode : C2900748 Manufacturer : CRMICRO Package / Case : TO-3P Supplier Device Package : TO-3P Series : Discrete Semiconductors	310 More on Order
PBSS4350Z,135 Nexperia	Transistors-Bipolar (BJT) - Single TRANS NPN 50V 3A SOT223 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN Current - Collector (Ic) (Max) : 3A Voltage - Collector Emitter Breakdown (Max) : 50V Vce Saturation (Max) @ Ib, Ic : 290mV @ 200mA, 2A Current - Collector Cutoff (Max) : 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 2A, 2V Power - Max : 2W Frequency - Transition : 100MHz Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-261-4, TO-261AA Supplier Device Package : SC-73	21666 More on Order
HY1920P HUAYI	Transistors-FETs, MOSFETs - RF MOSFET N-CH 200V 90A TO-220FB lcsc_productCode : C358134 Manufacturer : HUAYI Package / Case : TO-220FB Supplier Device Package : TO-220FB Series : Discrete Semiconductors	586 More on Order
IRFB4020PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 18A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 100mOhm @ 11A, 10V Vgs(th) (Max) @ Id : 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 50V Power Dissipation (Max) : 100W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	14755 More on Order
HY4008P HUAYI	Transistors-FETs, MOSFETs - RF MOSFET N-CH 80V 200A TO-220FB-3L lcsc_productCode : C110667 Manufacturer : HUAYI Package / Case : TO-220FB-3L Supplier Device Package : TO-220FB-3L Series : Discrete Semiconductors Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 200A Power Dissipation (Max) : 345W Rds On (Max) @ Id, Vgs : 3.5mΩ@10V Input Capacitance (Ciss) (Max) @ Vds : 8.154nF Gate Charge (Qg) (Max) @ Vgs : 650pF FET Type : 1个N沟道	143 More on Order
HY1920W HUAYI	Transistors-FETs, MOSFETs - RF MOSFET N-CH 200V 90A TO-247A-3L lcsc_productCode : C358133 Manufacturer : HUAYI Package / Case : TO-247A-3L Supplier Device Package : TO-247A-3L Series : Discrete Semiconductors Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 90A Power Dissipation (Max) : 375W Rds On (Max) @ Id, Vgs : 25mΩ@10V Input Capacitance (Ciss) (Max) @ Vds : 5.871nF Gate Charge (Qg) (Max) @ Vgs : 165pF FET Type : 1个N沟道	166 More on Order
IKW75N60TAFKSA1 Infineon Technologies	Transistors-IGBTs - Single IGBT 600V 80A 428W TO247-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchStop® IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 80A Current - Collector Pulsed (Icm) : 225A Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 75A Power - Max : 428W Switching Energy : 4.5mJ Input Type : Standard Gate Charge : 470nC Td (on/off) @ 25°C : 33ns/330ns Test Condition : 400V, 75A, 5Ohm, 15V Reverse Recovery Time (trr) : 121ns Operating Temperature : -40°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247-3	342 More on Order
IKW50N60DTPXKSA1 Infineon Technologies	Transistors-IGBTs - Single IGBT 600V 80A TO247-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchStop™ IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 80A Current - Collector Pulsed (Icm) : 150A Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 50A Power - Max : 319.2W Switching Energy : 1.53mJ (on), 850µJ (off) Input Type : Standard Gate Charge : 249nC Td (on/off) @ 25°C : 20ns/215ns Test Condition : 400V, 50A, 7Ohm, 15V Reverse Recovery Time (trr) : 115ns Operating Temperature : -40°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : PG-TO247-3	633 More on Order
PBSS5350Z,135 Nexperia	Transistors-Bipolar (BJT) - Single TRANS PNP 50V 3A SOT223 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP Current - Collector (Ic) (Max) : 3A Voltage - Collector Emitter Breakdown (Max) : 50V Vce Saturation (Max) @ Ib, Ic : 300mV @ 200mA, 2A Current - Collector Cutoff (Max) : 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 2A, 2V Power - Max : 2W Frequency - Transition : 100MHz Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-261-4, TO-261AA Supplier Device Package : SC-73	59374 More on Order
2SK2225-E Renesas Electronics America	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 2A TO-3P Manufacturer : Renesas Electronics America Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 12Ohm @ 1A, 15V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 984.7pF @ 30V Power Dissipation (Max) : 50W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-3PFM Package / Case : TO-3PFM, SC-93-3	299 More on Order
IPD60R800CEAUMA1 Infineon Technologies	Transistors-FETs, MOSFETs - Single CONSUMER Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : *	475 More on Order