Showing 1-20 of 64,459 items.
ImagePart NumberDescriptionIn StockQuantity
IKW50N60DTPXKSA1
Infineon Technologies
Transistors-IGBTs - Single
IGBT 600V 80A TO247-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchStop™
  • IGBT Type : Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 80A
  • Current - Collector Pulsed (Icm) : 150A
  • Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 50A
  • Power - Max : 319.2W
  • Switching Energy : 1.53mJ (on), 850µJ (off)
  • Input Type : Standard
  • Gate Charge : 249nC
  • Td (on/off) @ 25°C : 20ns/215ns
  • Test Condition : 400V, 50A, 7Ohm, 15V
  • Reverse Recovery Time (trr) : 115ns
  • Operating Temperature : -40°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : PG-TO247-3
633
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2SK2225-E
Renesas Electronics America
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 1500V 2A TO-3P
  • Manufacturer : Renesas Electronics America
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 1500V
  • Current - Continuous Drain (Id) @ 25°C : 2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 15V
  • Rds On (Max) @ Id, Vgs : 12Ohm @ 1A, 15V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 984.7pF @ 30V
  • Power Dissipation (Max) : 50W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-3PFM
  • Package / Case : TO-3PFM, SC-93-3
299
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IPD60R800CEAUMA1
Infineon Technologies
Transistors-FETs, MOSFETs - Single
CONSUMER
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : *
475
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BSP220,115
Nexperia
Transistors-FETs, MOSFETs - Single
MOSFET P-CH 200V 0.225A SOT223
  • Manufacturer : Nexperia
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : P-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 200V
  • Current - Continuous Drain (Id) @ 25°C : 225mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 12Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id : 2.8V @ 1mA
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 25V
  • Power Dissipation (Max) : 1.5W (Ta)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : SC-73
  • Package / Case : TO-261-4, TO-261AA
28883
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FP15R12W1T4B3BOMA1
Infineon Technologies
Transistors-IGBTs - Modules
IGBT MODULE VCES 600V 22A
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • IGBT Type : Trench Field Stop
  • Configuration : Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 28A
  • Power - Max : 130W
  • Vce(on) (Max) @ Vge, Ic : 2.25V @ 15V, 15A
  • Current - Collector Cutoff (Max) : 1mA
  • Input Capacitance (Cies) @ Vce : 890pF @ 25V
  • Input : Standard
  • NTC Thermistor : Yes
  • Operating Temperature : -40°C ~ 150°C
  • Mounting Type : Chassis Mount
  • Package / Case : Module
  • Supplier Device Package : Module
119
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TK6A60W,S4VX
Toshiba Semiconductor and Storage
Transistors-FETs, MOSFETs - Single
MOSFET N CH 600V 6.2A TO-220SIS
  • Manufacturer : Toshiba Semiconductor and Storage
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : DTMOSIV
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 600V
  • Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 750mOhm @ 3.1A, 10V
  • Vgs(th) (Max) @ Id : 3.7V @ 310µA
  • Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 390pF @ 300V
  • FET Feature : Super Junction
  • Power Dissipation (Max) : 30W (Tc)
  • Operating Temperature : 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220SIS
  • Package / Case : TO-220-3 Full Pack
193
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STGB19NC60KDT4
STMicroelectronics
Transistors-IGBTs - Single
IGBT 600V 35A 125W D2PAK
  • Manufacturer : STMicroelectronics
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : PowerMESH™
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 35A
  • Current - Collector Pulsed (Icm) : 75A
  • Vce(on) (Max) @ Vge, Ic : 2.75V @ 15V, 12A
  • Power - Max : 125W
  • Switching Energy : 165µJ (on), 255µJ (off)
  • Input Type : Standard
  • Gate Charge : 55nC
  • Td (on/off) @ 25°C : 30ns/105ns
  • Test Condition : 480V, 12A, 10Ohm, 15V
  • Reverse Recovery Time (trr) : 31ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package : D2PAK
132
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IRFZ44NPBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 49A TO-220AB
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 17.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1470pF @ 25V
  • Power Dissipation (Max) : 94W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
3739
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IRFP064NPBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 55V 110A TO-247AC
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 55V
  • Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 8mOhm @ 59A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 25V
  • Power Dissipation (Max) : 200W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-247AC
  • Package / Case : TO-247-3
16682
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IHW20N135R5XKSA1
Infineon Technologies
Transistors-IGBTs - Single
IGBT 1350V 40A 288W TO247
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchStop®
  • Voltage - Collector Emitter Breakdown (Max) : 1350V
  • Current - Collector (Ic) (Max) : 40A
  • Current - Collector Pulsed (Icm) : 60A
  • Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 20A
  • Power - Max : 288W
  • Switching Energy : 950µJ (off)
  • Input Type : Standard
  • Gate Charge : 170nC
  • Td (on/off) @ 25°C : -/235ns
  • Test Condition : 600V, 20A, 10Ohm, 15V
  • Operating Temperature : -40°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-247-3
  • Supplier Device Package : PG-TO247-3
1136
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AOD5N50
Alpha & Omega Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 500V 5A TO252
  • Manufacturer : Alpha & Omega Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 500V
  • Current - Continuous Drain (Id) @ 25°C : 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 1.6Ohm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id : 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
  • Vgs (Max) : ±30V
  • Input Capacitance (Ciss) (Max) @ Vds : 670pF @ 25V
  • Power Dissipation (Max) : 104W (Tc)
  • Operating Temperature : -50°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Supplier Device Package : TO-252, (D-Pak)
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
473
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FQPF50N06
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 60V 31A TO-220F
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : QFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 60V
  • Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 22mOhm @ 15.5A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 41nC @ 10V
  • Vgs (Max) : ±25V
  • Input Capacitance (Ciss) (Max) @ Vds : 1540pF @ 25V
  • Power Dissipation (Max) : 47W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220F
  • Package / Case : TO-220-3 Full Pack
103
More on Order
IRG4RC10SDTRPBF
Infineon Technologies
Transistors-IGBTs - Single
IGBT 600V 14A 38W DPAK
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 14A
  • Current - Collector Pulsed (Icm) : 18A
  • Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 8A
  • Power - Max : 38W
  • Switching Energy : 310µJ (on), 3.28mJ (off)
  • Input Type : Standard
  • Gate Charge : 15nC
  • Td (on/off) @ 25°C : 76ns/815ns
  • Test Condition : 480V, 8A, 100Ohm, 15V
  • Reverse Recovery Time (trr) : 28ns
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Surface Mount
  • Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package : D-Pak
127
More on Order
IRFP260NPBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 200V 50A TO-247AC
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 200V
  • Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 40mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 234nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 4057pF @ 25V
  • Power Dissipation (Max) : 300W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-247AC
  • Package / Case : TO-247-3
10127
More on Order
IRFP150NPBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 100V 42A TO-247AC
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 100V
  • Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 36mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 25V
  • Power Dissipation (Max) : 160W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-247AC
  • Package / Case : TO-247-3
3487
More on Order
IRF740PBF
Vishay Siliconix
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 400V 10A TO-220AB
  • Manufacturer : Vishay Siliconix
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 400V
  • Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 550mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
  • Power Dissipation (Max) : 125W (Tc)
  • Operating Temperature : -55°C ~ 150°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-220AB
  • Package / Case : TO-220-3
2604
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IKP20N60TXKSA1
Infineon Technologies
Transistors-IGBTs - Single
IGBT 600V 40A 166W TO220-3
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : TrenchStop®
  • IGBT Type : Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) : 600V
  • Current - Collector (Ic) (Max) : 40A
  • Current - Collector Pulsed (Icm) : 60A
  • Vce(on) (Max) @ Vge, Ic : 2.05V @ 15V, 20A
  • Power - Max : 166W
  • Switching Energy : 770µJ
  • Input Type : Standard
  • Gate Charge : 120nC
  • Td (on/off) @ 25°C : 18ns/199ns
  • Test Condition : 400V, 20A, 12Ohm, 15V
  • Reverse Recovery Time (trr) : 41ns
  • Operating Temperature : -40°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Package / Case : TO-220-3
  • Supplier Device Package : PG-TO220-3
788
More on Order
RFD14N05L
ON Semiconductor
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 50V 14A I-PAK
  • Manufacturer : ON Semiconductor
  • Warranty : Up to 1 year [Limited-Warranty]*
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 50V
  • Current - Continuous Drain (Id) @ 25°C : 14A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 5V
  • Rds On (Max) @ Id, Vgs : 100mOhm @ 14A, 5V
  • Vgs(th) (Max) @ Id : 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
  • Vgs (Max) : ±10V
  • Input Capacitance (Ciss) (Max) @ Vds : 670pF @ 25V
  • Power Dissipation (Max) : 48W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : I-PAK
  • Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
6695
More on Order
IRFP250NPBF
Infineon Technologies
Transistors-FETs, MOSFETs - Single
MOSFET N-CH 200V 30A TO-247AC
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Series : HEXFET®
  • FET Type : N-Channel
  • Technology : MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) : 200V
  • Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) : 10V
  • Rds On (Max) @ Id, Vgs : 75mOhm @ 18A, 10V
  • Vgs(th) (Max) @ Id : 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs : 123nC @ 10V
  • Vgs (Max) : ±20V
  • Input Capacitance (Ciss) (Max) @ Vds : 2159pF @ 25V
  • Power Dissipation (Max) : 214W (Tc)
  • Operating Temperature : -55°C ~ 175°C (TJ)
  • Mounting Type : Through Hole
  • Supplier Device Package : TO-247AC
  • Package / Case : TO-247-3
5997
More on Order
FP25R12KT3
Infineon Technologies
Transistors-IGBTs - Modules
IGBT MODULE VCES 1200V 40A
  • Manufacturer : Infineon Technologies
  • Warranty : Up to 1 year [Limited-Warranty]*
  • Configuration : Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max) : 1200V
  • Current - Collector (Ic) (Max) : 40A
  • Power - Max : 155W
  • Vce(on) (Max) @ Vge, Ic : 2.15V @ 15V, 25A
  • Current - Collector Cutoff (Max) : 5mA
  • Input Capacitance (Cies) @ Vce : 1.8nF @ 25V
  • Input : Standard
  • NTC Thermistor : Yes
  • Operating Temperature : -40°C ~ 125°C
  • Mounting Type : Chassis Mount
  • Package / Case : Module
  • Supplier Device Package : Module
407
More on Order
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