Transistors

Showing 1-20 of 64,464 items.

Part Number	Description	In Stock
CMH24N50 Cmos	Transistors-FETs, MOSFETs - RF MOSFET N-CH 500V 24A TO-247 lcsc_productCode : C5203946 Manufacturer : Cmos Package / Case : TO-247 Supplier Device Package : TO-247 Series : Discrete Semiconductors	26 More on Order
CS25N50ANR CRMICRO	Transistors-FETs, MOSFETs - RF MOSFET N-CH 500V 25A TO-3P lcsc_productCode : C2900748 Manufacturer : CRMICRO Package / Case : TO-3P Supplier Device Package : TO-3P Series : Discrete Semiconductors	310 More on Order
PBSS4350Z,135 Nexperia	Transistors-Bipolar (BJT) - Single TRANS NPN 50V 3A SOT223 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN Current - Collector (Ic) (Max) : 3A Voltage - Collector Emitter Breakdown (Max) : 50V Vce Saturation (Max) @ Ib, Ic : 290mV @ 200mA, 2A Current - Collector Cutoff (Max) : 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 2A, 2V Power - Max : 2W Frequency - Transition : 100MHz Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-261-4, TO-261AA Supplier Device Package : SC-73	21666 More on Order
HY1920P HUAYI	Transistors-FETs, MOSFETs - RF MOSFET N-CH 200V 90A TO-220FB lcsc_productCode : C358134 Manufacturer : HUAYI Package / Case : TO-220FB Supplier Device Package : TO-220FB Series : Discrete Semiconductors	586 More on Order
IRFB4020PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 18A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 18A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 100mOhm @ 11A, 10V Vgs(th) (Max) @ Id : 4.9V @ 100µA Gate Charge (Qg) (Max) @ Vgs : 29nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1200pF @ 50V Power Dissipation (Max) : 100W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	14755 More on Order
HY4008P HUAYI	Transistors-FETs, MOSFETs - RF MOSFET N-CH 80V 200A TO-220FB-3L lcsc_productCode : C110667 Manufacturer : HUAYI Package / Case : TO-220FB-3L Supplier Device Package : TO-220FB-3L Series : Discrete Semiconductors Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 200A Power Dissipation (Max) : 345W Rds On (Max) @ Id, Vgs : 3.5mΩ@10V Input Capacitance (Ciss) (Max) @ Vds : 8.154nF Gate Charge (Qg) (Max) @ Vgs : 650pF FET Type : 1个N沟道	143 More on Order
HY1920W HUAYI	Transistors-FETs, MOSFETs - RF MOSFET N-CH 200V 90A TO-247A-3L lcsc_productCode : C358133 Manufacturer : HUAYI Package / Case : TO-247A-3L Supplier Device Package : TO-247A-3L Series : Discrete Semiconductors Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 90A Power Dissipation (Max) : 375W Rds On (Max) @ Id, Vgs : 25mΩ@10V Input Capacitance (Ciss) (Max) @ Vds : 5.871nF Gate Charge (Qg) (Max) @ Vgs : 165pF FET Type : 1个N沟道	166 More on Order
IKW75N60TAFKSA1 Infineon Technologies	Transistors-IGBTs - Single IGBT 600V 80A 428W TO247-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchStop® IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 80A Current - Collector Pulsed (Icm) : 225A Vce(on) (Max) @ Vge, Ic : 2V @ 15V, 75A Power - Max : 428W Switching Energy : 4.5mJ Input Type : Standard Gate Charge : 470nC Td (on/off) @ 25°C : 33ns/330ns Test Condition : 400V, 75A, 5Ohm, 15V Reverse Recovery Time (trr) : 121ns Operating Temperature : -40°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : TO-247-3	342 More on Order
IKW50N60DTPXKSA1 Infineon Technologies	Transistors-IGBTs - Single IGBT 600V 80A TO247-3 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchStop™ IGBT Type : Trench Field Stop Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 80A Current - Collector Pulsed (Icm) : 150A Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 50A Power - Max : 319.2W Switching Energy : 1.53mJ (on), 850µJ (off) Input Type : Standard Gate Charge : 249nC Td (on/off) @ 25°C : 20ns/215ns Test Condition : 400V, 50A, 7Ohm, 15V Reverse Recovery Time (trr) : 115ns Operating Temperature : -40°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : PG-TO247-3	633 More on Order
PBSS5350Z,135 Nexperia	Transistors-Bipolar (BJT) - Single TRANS PNP 50V 3A SOT223 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP Current - Collector (Ic) (Max) : 3A Voltage - Collector Emitter Breakdown (Max) : 50V Vce Saturation (Max) @ Ib, Ic : 300mV @ 200mA, 2A Current - Collector Cutoff (Max) : 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 2A, 2V Power - Max : 2W Frequency - Transition : 100MHz Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-261-4, TO-261AA Supplier Device Package : SC-73	59374 More on Order
2SK2225-E Renesas Electronics America	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 2A TO-3P Manufacturer : Renesas Electronics America Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 15V Rds On (Max) @ Id, Vgs : 12Ohm @ 1A, 15V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 984.7pF @ 30V Power Dissipation (Max) : 50W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-3PFM Package / Case : TO-3PFM, SC-93-3	299 More on Order
IPD60R800CEAUMA1 Infineon Technologies	Transistors-FETs, MOSFETs - Single CONSUMER Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : *	475 More on Order
BSP220,115 Nexperia	Transistors-FETs, MOSFETs - Single MOSFET P-CH 200V 0.225A SOT223 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 200V Current - Continuous Drain (Id) @ 25°C : 225mA (Ta) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 12Ohm @ 200mA, 10V Vgs(th) (Max) @ Id : 2.8V @ 1mA Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 25V Power Dissipation (Max) : 1.5W (Ta) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SC-73 Package / Case : TO-261-4, TO-261AA	28883 More on Order
FP15R12W1T4B3BOMA1 Infineon Technologies	Transistors-IGBTs - Modules IGBT MODULE VCES 600V 22A Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* IGBT Type : Trench Field Stop Configuration : Three Phase Inverter Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 28A Power - Max : 130W Vce(on) (Max) @ Vge, Ic : 2.25V @ 15V, 15A Current - Collector Cutoff (Max) : 1mA Input Capacitance (Cies) @ Vce : 890pF @ 25V Input : Standard NTC Thermistor : Yes Operating Temperature : -40°C ~ 150°C Mounting Type : Chassis Mount Package / Case : Module Supplier Device Package : Module	119 More on Order
TK6A60W,S4VX Toshiba Semiconductor and Storage	Transistors-FETs, MOSFETs - Single MOSFET N CH 600V 6.2A TO-220SIS Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Series : DTMOSIV FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 750mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id : 3.7V @ 310µA Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 390pF @ 300V FET Feature : Super Junction Power Dissipation (Max) : 30W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220SIS Package / Case : TO-220-3 Full Pack	193 More on Order
STGB19NC60KDT4 STMicroelectronics	Transistors-IGBTs - Single IGBT 600V 35A 125W D2PAK Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ Voltage - Collector Emitter Breakdown (Max) : 600V Current - Collector (Ic) (Max) : 35A Current - Collector Pulsed (Icm) : 75A Vce(on) (Max) @ Vge, Ic : 2.75V @ 15V, 12A Power - Max : 125W Switching Energy : 165µJ (on), 255µJ (off) Input Type : Standard Gate Charge : 55nC Td (on/off) @ 25°C : 30ns/105ns Test Condition : 480V, 12A, 10Ohm, 15V Reverse Recovery Time (trr) : 31ns Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package : D2PAK	132 More on Order
IRFZ44NPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 49A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 17.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1470pF @ 25V Power Dissipation (Max) : 94W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	3739 More on Order
IRFP064NPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 110A TO-247AC Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 8mOhm @ 59A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 25V Power Dissipation (Max) : 200W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247AC Package / Case : TO-247-3	16682 More on Order
IHW20N135R5XKSA1 Infineon Technologies	Transistors-IGBTs - Single IGBT 1350V 40A 288W TO247 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchStop® Voltage - Collector Emitter Breakdown (Max) : 1350V Current - Collector (Ic) (Max) : 40A Current - Collector Pulsed (Icm) : 60A Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 20A Power - Max : 288W Switching Energy : 950µJ (off) Input Type : Standard Gate Charge : 170nC Td (on/off) @ 25°C : -/235ns Test Condition : 600V, 20A, 10Ohm, 15V Operating Temperature : -40°C ~ 175°C (TJ) Mounting Type : Through Hole Package / Case : TO-247-3 Supplier Device Package : PG-TO247-3	1136 More on Order
AOD5N50 Alpha & Omega Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET N-CH 500V 5A TO252 Manufacturer : Alpha & Omega Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 500V Current - Continuous Drain (Id) @ 25°C : 5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.6Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id : 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 670pF @ 25V Power Dissipation (Max) : 104W (Tc) Operating Temperature : -50°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TO-252, (D-Pak) Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63	473 More on Order