Transistors

Showing 61-80 of 64,476 items.

Part Number	Description	In Stock
AO4614B Alpha & Omega Semiconductor	Transistors-FETs, MOSFETs - Arrays MOSFET N/P-CH 40V 6A/5A 8SOIC Manufacturer : Alpha & Omega Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : N and P-Channel FET Feature : Logic Level Gate Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 6A, 5A Rds On (Max) @ Id, Vgs : 30mOhm @ 6A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 10.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds : 650pF @ 20V Power - Max : 2W Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 8-SOIC (0.154", 3.90mm Width) Supplier Device Package : 8-SO part_number_key_clear : AO4614B	344 More on Order
IRF4905PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 74A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 74A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 20mOhm @ 38A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 180nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 3400pF @ 25V Power Dissipation (Max) : 200W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3 part_number_key_clear : IRF4905PBF	62590 More on Order
SISS26LDN-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 81.2A PP 1212-8S Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® Gen IV FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 23.7A (Ta), 81.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 4.3mOhm @ 15A, 10V Vgs(th) (Max) @ Id : 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 48nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1980pF @ 30V Power Dissipation (Max) : 4.8W (Ta), 57W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PowerPAK® 1212-8S Package / Case : PowerPAK® 1212-8S part_number_key_clear : SISS26LDNT1GE3	139 More on Order
RSR010N10TL Rohm Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 1.0A TSMT3 Manufacturer : Rohm Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 1A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 520mOhm @ 1A, 10V Vgs(th) (Max) @ Id : 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 5V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 140pF @ 25V Power Dissipation (Max) : 540mW (Ta) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : TSMT3 Package / Case : SC-96 part_number_key_clear : RSR010N10TL	9101 More on Order
FSB560A ON Semiconductor	Transistors-Bipolar (BJT) - Single TRANS NPN 60V 2A SSOT-3 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN Current - Collector (Ic) (Max) : 2A Voltage - Collector Emitter Breakdown (Max) : 60V Vce Saturation (Max) @ Ib, Ic : 300mV @ 200mA, 2A Current - Collector Cutoff (Max) : 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 250 @ 500mA, 2V Power - Max : 500mW Frequency - Transition : 75MHz Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : 3-SSOT part_number_key_clear : FSB560A	24688 More on Order
TK2P60D(TE16L1,NQ) Toshiba Semiconductor and Storage	Transistors-FETs, MOSFETs - Single MOSFET N-CH 600V 2A PW-MOLD Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Series : π-MOSVII FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 600V Current - Continuous Drain (Id) @ 25°C : 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 4.3Ohm @ 1A, 10V Vgs(th) (Max) @ Id : 4.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 7nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 280pF @ 25V Power Dissipation (Max) : 60W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PW-MOLD Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63 part_number_key_clear : TK2P60DTE16L1NQ	304 More on Order
MMDT2907A-7-F Diodes Incorporated	Transistors-Bipolar (BJT) - Arrays TRANS 2PNP 60V 0.6A SOT363 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP (Dual) Current - Collector (Ic) (Max) : 600mA Voltage - Collector Emitter Breakdown (Max) : 60V Vce Saturation (Max) @ Ib, Ic : 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max) : 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 150mA, 10V Power - Max : 200mW Frequency - Transition : 200MHz Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SOT-363 part_number_key_clear : MMDT2907A7F	14187 More on Order
KGF75N65KDF KEC	Transistors-IGBTs - Single The KGF75N65KDF 650V 75A IGBT Transistor TO-247 is a power semiconductor designed for high-voltage and high-current switching applications. An IGBT (Insulated Gate Bipolar Transistor) combines MOS-gate control with bipolar power-handling characteristics, making this class of device widely used in power conversion and switching circuits. With a specified 650V voltage rating and 75A current rating, the KGF75N65KDF is intended for power-electronics applications where substantial voltage and current handling capability is required. Its TO-247 package provides a practical through-hole format for power circuits and allows the device to be mounted with appropriate thermal-management hardware where required. Typical applications include inverters, uninterruptible power supplies (UPS), motor-control systems, power converters, switching power supplies, and other high-power switching circuits. When replacing an existing IGBT, the complete electrical characteristics, pin configuration, switching parameters, gate-drive requirements, thermal characteristics, and circuit conditions should be checked against the exact device datasheet. Matching only voltage and current ratings is not sufficient for a safe semiconductor substitution. catch_source : chippk Manufacturer : KEC Component Type : IGBT Condition : Brand New Current : 75A Current Rating : 75A Device Type : Power Transistor High-Power Switching : Yes Inverter Application : Yes Inverter Use : Yes Motor Drive Application : Yes Motor Drive Use : Yes Mounting : Through-Hole Package : TO-247 Power Conversion : Yes Power Electronics : Yes Primary Function : High-Power Switching Semiconductor Type : IGBT Thermal Management : Heatsink may be required depending on operating conditions Through-Hole : Yes UPS Application : Yes UPS Use : Yes Voltage : 650V Voltage Rating : 650V	618 More on Order
MM75G3T65B MACMIC	Transistors-IGBTs - Single catch_source : chippk Manufacturer : MACMIC Collector Current (25°C) : 115A Collector-Emitter Voltage (VCES) : 650V Continuous Collector Current : 75A (Tc = 100°C) Device Type : IGBT Power Transistor Gate-Emitter Voltage : ±20V Integrated Diode : Yes (Fast Recovery) Maximum Junction Temperature : 175°C Model : MM75G3T65B Package : TO-247 Pulsed Collector Current : 225A Technology : Trench Field Stop IGBT Typical VCE(sat) : Approximately 1.45V @ 25°C	682 More on Order
NCE80TD65BT NCE	Transistors-IGBTs - Single The IGBT NCE80TD65BT 650V 80A TO-247 Transistor is designed for demanding power switching applications requiring high efficiency and reliable performance. Manufactured using advanced Trench Field Stop (FS II) technology, it combines low saturation voltage, fast switching speed, and excellent thermal stability to improve overall system efficiency. Its robust 650V voltage rating, 80A collector current, and industry-standard TO-247 package make it an excellent choice for high-power converters, industrial motor control systems, solar energy equipment, induction heating systems, UPS units, and inverter applications. The device delivers dependable operation in both commercial and industrial environments where efficient power management is essential. catch_source : chippk Manufacturer : NCE Application : Power Switching Collector-Emitter Voltage (VCES) : 650V Continuous Collector Current (IC) : 80A Current Rating : 80A Device Type : IGBT High-Speed Switching : Yes Industrial Grade : Yes Mounting : Through-Hole Mounting Type : Through-Hole Package : TO-247 Power Applications : Yes Technology : Trench FS II Voltage Rating : 650V	696 More on Order
KGF75N65KDF KEC	Transistors-IGBTs - Single The KGF75N65KDF 650V 75A IGBT Transistor TO-247 is a power semiconductor designed for high-voltage and high-current switching applications. An IGBT (Insulated Gate Bipolar Transistor) combines MOS-gate control with bipolar power-handling characteristics, making this class of device widely used in power conversion and switching circuits. With a specified 650V voltage rating and 75A current rating, the KGF75N65KDF is intended for power-electronics applications where substantial voltage and current handling capability is required. Its TO-247 package provides a practical through-hole format for power circuits and allows the device to be mounted with appropriate thermal-management hardware where required. Typical applications include inverters, uninterruptible power supplies (UPS), motor-control systems, power converters, switching power supplies, and other high-power switching circuits. When replacing an existing IGBT, the complete electrical characteristics, pin configuration, switching parameters, gate-drive requirements, thermal characteristics, and circuit conditions should be checked against the exact device datasheet. Matching only voltage and current ratings is not sufficient for a safe semiconductor substitution. Component Type : IGBT Condition : Brand New Current : 75A Current Rating : 75A Device Type : Power Transistor High-Power Switching : Yes Inverter Application : Yes Inverter Use : Yes Manufacturer : KEC Motor Drive Application : Yes Motor Drive Use : Yes Mounting : Through-Hole Package : TO-247 Power Conversion : Yes Power Electronics : Yes Primary Function : High-Power Switching Semiconductor Type : IGBT Thermal Management : Heatsink may be required depending on operating conditions Through-Hole : Yes UPS Application : Yes UPS Use : Yes Voltage : 650V Voltage Rating : 650V catch_source : chippk	618 More on Order
CSD16401Q5T Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* Series : NexFET™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 25V Current - Continuous Drain (Id) @ 25°C : 100A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 1.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id : 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V Vgs (Max) : +16V, -12V Input Capacitance (Ciss) (Max) @ Vds : 4100pF @ 12.5V Power Dissipation (Max) : 3.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-VSON-CLIP (5x6) Package / Case : 8-PowerTDFN part_number_key_clear : CSD16401Q5T	310 More on Order
SI1012CR-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 20V 0.63A SC-75A Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 20V Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V Rds On (Max) @ Id, Vgs : 396mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 2nC @ 8V Vgs (Max) : ±8V Input Capacitance (Ciss) (Max) @ Vds : 43pF @ 10V Power Dissipation (Max) : 240mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SC-75A Package / Case : SC-75, SOT-416 part_number_key_clear : SI1012CRT1GE3	343 More on Order
MMBFJ177LT1G ON Semiconductor	Transistors-JFETs JFET P-CH 30V 0.225W SOT23 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Voltage - Breakdown (V(BR)GSS) : 30V Current - Drain (Idss) @ Vds (Vgs=0) : 1.5mA @ 15V Voltage - Cutoff (VGS off) @ Id : 800mV @ 10nA Input Capacitance (Ciss) (Max) @ Vds : 11pF @ 10V (VGS) Resistance - RDS(On) : 300 Ohms Power - Max : 225mW Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SOT-23-3 (TO-236) part_number_key_clear : MMBFJ177LT1G	118954 More on Order
CSD16556Q5B Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8VSON Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* Series : NexFET™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 25V Current - Continuous Drain (Id) @ 25°C : 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 1.07mOhm @ 30A, 10V Vgs(th) (Max) @ Id : 1.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 47nC @ 4.5V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 6180pF @ 15V Power Dissipation (Max) : 3.2W (Ta), 191W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-VSONP (5x6) Package / Case : 8-PowerTDFN part_number_key_clear : CSD16556Q5B	4002 More on Order
CSD16401Q5 Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 25V 100A 8-SON Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* Series : NexFET™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 25V Current - Continuous Drain (Id) @ 25°C : 38A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 1.6mOhm @ 40A, 10V Vgs(th) (Max) @ Id : 1.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29nC @ 4.5V Vgs (Max) : +16V, -12V Input Capacitance (Ciss) (Max) @ Vds : 4100pF @ 12.5V Power Dissipation (Max) : 3.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-VSON-CLIP (5x6) Package / Case : 8-PowerTDFN part_number_key_clear : CSD16401Q5	7027 More on Order
MIXA40WB1200TED IXYS	Transistors-IGBTs - Modules IGBT MODULE 1200V 40A Manufacturer : IXYS Warranty : Up to 1 year [Limited-Warranty]* IGBT Type : PT Configuration : Three Phase Inverter with Brake Voltage - Collector Emitter Breakdown (Max) : 1200V Current - Collector (Ic) (Max) : 60A Power - Max : 195W Vce(on) (Max) @ Vge, Ic : 2.1V @ 15V, 35A Current - Collector Cutoff (Max) : 2.1mA Input : Three Phase Bridge Rectifier NTC Thermistor : Yes Operating Temperature : -40°C ~ 125°C (TJ) Mounting Type : Chassis Mount Package / Case : E2 Supplier Device Package : E2 part_number_key_clear : MIXA40WB1200TED	461 More on Order
NTD3055L104T4G ON Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 12A DPAK Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 12A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 5V Rds On (Max) @ Id, Vgs : 104mOhm @ 6A, 5V Vgs(th) (Max) @ Id : 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V Vgs (Max) : ±15V Input Capacitance (Ciss) (Max) @ Vds : 440pF @ 25V Power Dissipation (Max) : 1.5W (Ta), 48W (Tj) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : DPAK Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63 part_number_key_clear : NTD3055L104T4G	54208 More on Order
DMP3099L-7 Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 30V SOT23 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 65mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id : 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 5.2nC @ 4.5V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 563pF @ 25V Power Dissipation (Max) : 1.08W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23 Package / Case : TO-236-3, SC-59, SOT-23-3 part_number_key_clear : DMP3099L7	467521 More on Order
2N7002DW-7-F Diodes Incorporated	Transistors-FETs, MOSFETs - Arrays MOSFET 2N-CH 60V 0.23A SOT-363 Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : 2 N-Channel (Dual) FET Feature : Standard Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 230mA Rds On (Max) @ Id, Vgs : 7.5Ohm @ 50mA, 5V Vgs(th) (Max) @ Id : 2V @ 250µA Input Capacitance (Ciss) (Max) @ Vds : 50pF @ 25V Power - Max : 310mW Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : SOT-363 part_number_key_clear : 2N7002DW7F	603333 More on Order