VS-GT100TP120N

Part Number
VS-GT100TP120N
Manufacturer
Vishay Semiconductor Diodes Division
Category
Transistors
Description
IGBT 1200V 180A 652W INT-A-PAK
VS-GT100TP120N Specifications
RoHS No RoHS Information
EDA/CAD Models VS-GT100TP120N PCB Footprint and Symbol
Brand Vishay Semiconductor Diodes Division
Product Line Semiconductors
Subcategory IGBTs - Modules
Series -
IGBT Type Trench
Configuration Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 180A
Power - Max 652W
Vce(on) (Max) @ Vge, Ic 2.35V @ 15V, 100A
Current - Collector Cutoff (Max) 5mA
Input Capacitance (Cies) @ Vce 12.8nF @ 30V
Input Standard
NTC Thermistor No
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Package / Case INT-A-PAK (3 + 4)
Supplier Device Package INT-A-PAK
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