STGWA80H65DFB
| Part Number | STGWA80H65DFB |
| Manufacturer | STMicroelectronics |
| Category | Transistors |
| Description | IGBT BIPO 650V 80A TO247-3 |
STGWA80H65DFB Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | STGWA80H65DFB PCB Footprint and Symbol |
| Brand | STMicroelectronics |
| Product Line | Semiconductors |
| Subcategory | IGBTs - Single |
| Series | - |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 120A |
| Current - Collector Pulsed (Icm) | 240A |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 80A |
| Power - Max | 469W |
| Switching Energy | 2.1mJ (on), 1.5mJ (off) |
| Input Type | Standard |
| Gate Charge | 414nC |
| Td (on/off) @ 25°C | 84ns/280ns |
| Test Condition | 400V, 80A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 85ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 Long Leads |
| part_number_key_clear | STGWA80H65DFB |
Quick Inquiry
| In Stock | 747 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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