| RoHS |
No RoHS Information
|
| EDA/CAD Models |
SQ1922EEH-T1_GE3 PCB Footprint and Symbol |
| Brand |
Vishay Siliconix |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Arrays |
| Series |
Automotive, AEC-Q101, TrenchFET® |
| FET Type |
2 N-Channel (Dual) |
| FET Feature |
Standard |
| Drain to Source Voltage (Vdss) |
20V |
| Current - Continuous Drain (Id) @ 25°C |
840mA (Tc) |
| Rds On (Max) @ Id, Vgs |
350mOhm @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id |
1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
1.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds |
50pF @ 10V |
| Power - Max |
1.5W |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Surface Mount |
| Package / Case |
6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package |
SC-70-6 |
| part_number_key_clear |
SQ1922EEHT1GE3 |
