SQ1922EEH-T1_GE3
| Part Number | SQ1922EEH-T1_GE3 |
| Manufacturer | Vishay Siliconix |
| Category | Transistors |
| Description | MOSFET 2N-CH 20V SC70-6 |
SQ1922EEH-T1_GE3 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | SQ1922EEH-T1_GE3 PCB Footprint and Symbol |
| Brand | Vishay Siliconix |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | Automotive, AEC-Q101, TrenchFET® |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 840mA (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
| Power - Max | 1.5W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-70-6 |
Quick Inquiry
| In Stock | 11916 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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