| RoHS |
No RoHS Information
|
| EDA/CAD Models |
SIUD412ED-T1-GE3 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
Vishay Siliconix |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Single |
| Series |
TrenchFET® |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
12V |
| Current - Continuous Drain (Id) @ 25°C |
500mA (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
1.2V, 4.5V |
| Rds On (Max) @ Id, Vgs |
340mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id |
900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
0.71nC @ 4.5V |
| Vgs (Max) |
±5V |
| Input Capacitance (Ciss) (Max) @ Vds |
21pF @ 6V |
| FET Feature |
- |
| Power Dissipation (Max) |
1.25W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
PowerPAK® 0806 |
| Package / Case |
PowerPAK® 0806 |
