SI5975DC-T1-E3
| Part Number | SI5975DC-T1-E3 |
| Manufacturer | Vishay Siliconix |
| Category | Transistors |
| Description | MOSFET 2P-CH 12V 3.1A CHIPFET |
SI5975DC-T1-E3 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | SI5975DC-T1-E3 PCB Footprint and Symbol |
| Brand | Vishay Siliconix |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | TrenchFET® |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 3.1A, 4.5V |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
Quick Inquiry
| In Stock | 257 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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