SI5857DU-T1-E3

Part Number
SI5857DU-T1-E3
Manufacturer
Vishay Siliconix
Category
Transistors
Description
MOSFET P-CH 20V 6A PPAK CHIPFET
SI5857DU-T1-E3 Specifications
RoHS No RoHS Information
EDA/CAD Models SI5857DU-T1-E3 PCB Footprint and Symbol
Warranty Up to 1 year [Limited-Warranty]*
Brand Vishay Siliconix
Product Line Semiconductors
Subcategory FETs, MOSFETs - Single
Series LITTLE FOOT®
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 58mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 480pF @ 10V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2.3W (Ta), 10.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® ChipFet Dual
Package / Case PowerPAK® ChipFET™ Dual
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