RQ3E120ATTB
| Part Number | RQ3E120ATTB |
| Manufacturer | Rohm Semiconductor |
| Category | Transistors |
| Description | MOSFET P-CH 30V 12A HSMT8 |
RQ3E120ATTB Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | RQ3E120ATTB PCB Footprint and Symbol |
| Brand | Rohm Semiconductor |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Single |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 15V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSMT (3.2x3) |
| Package / Case | 8-PowerVDFN |
| part_number_key_clear | RQ3E120ATTB |
Quick Inquiry
| In Stock | 9965 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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