| RoHS |
No RoHS Information
|
| EDA/CAD Models |
RN1910FE,LF(CT PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
Toshiba Semiconductor and Storage |
| Product Line |
Semiconductors |
| Subcategory |
Bipolar (BJT) - Arrays, Pre-Biased |
| Series |
- |
| Transistor Type |
2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
4.7kOhms |
| Resistor - Emitter Base (R2) |
- |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| Frequency - Transition |
250MHz |
| Power - Max |
100mW |
| Mounting Type |
Surface Mount |
| Package / Case |
SOT-563, SOT-666 |
| Supplier Device Package |
ES6 |
