| RoHS |
No RoHS Information
|
| EDA/CAD Models |
PSMN3R9-60XSQ PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
NXP |
| Product Line |
Semiconductors |
| Subcategory |
FETs, MOSFETs - Single |
| Series |
- |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
60V |
| Current - Continuous Drain (Id) @ 25°C |
75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
4mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs |
103nC @ 10V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
5494pF @ 25V |
| FET Feature |
- |
| Power Dissipation (Max) |
55W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220F |
| Package / Case |
TO-220-3 Full Pack, Isolated Tab |
