| RoHS |
No RoHS Information
|
| EDA/CAD Models |
PDTC115ES,126 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
NXP |
| Product Line |
Semiconductors |
| Subcategory |
Bipolar (BJT) - Single, Pre-Biased |
| Series |
- |
| Transistor Type |
NPN - Pre-Biased |
| Current - Collector (Ic) (Max) |
20mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
100 kOhms |
| Resistor - Emitter Base (R2) |
100 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
150mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) |
1µA |
| Frequency - Transition |
- |
| Power - Max |
500mW |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package |
TO-92-3 |
