| RoHS |
No RoHS Information
|
| EDA/CAD Models |
PDTB113ZK,115 PCB Footprint and Symbol |
| Warranty |
Up to 1 year [Limited-Warranty]* |
| Brand |
NXP |
| Product Line |
Semiconductors |
| Subcategory |
Bipolar (BJT) - Single, Pre-Biased |
| Series |
- |
| Transistor Type |
PNP - Pre-Biased |
| Current - Collector (Ic) (Max) |
500mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
1 kOhms |
| Resistor - Emitter Base (R2) |
10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
70 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) |
500nA |
| Frequency - Transition |
- |
| Power - Max |
250mW |
| Mounting Type |
Surface Mount |
| Package / Case |
TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package |
SMT3; MPAK |
