IPG20N10S4L22AATMA1
| Part Number | IPG20N10S4L22AATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Transistors |
| Description | MOSFET 2N-CH 100V 20A TDSON-8 |
IPG20N10S4L22AATMA1 Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | IPG20N10S4L22AATMA1 PCB Footprint and Symbol |
| Brand | Infineon Technologies |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | OptiMOS™ |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 20A |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 25µA |
| Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1755pF @ 25V |
| Power - Max | 60W |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PG-TDSON-8-10 |
Quick Inquiry
| In Stock | 35843 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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