HY1920W

Part Number
HY1920W
Manufacturer
HUAYI
Category
Transistors
Description
MOSFET N-CH 200V 90A TO-247A-3L
HY1920W Specifications
Brand HUAYI
Subcategory FETs, MOSFETs - RF
Package / Case TO-247A-3L
Supplier Device Package TO-247A-3L
Series Discrete Semiconductors
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 90A
Power Dissipation (Max) 375W
Rds On (Max) @ Id, Vgs 25mΩ@10V
Input Capacitance (Ciss) (Max) @ Vds 5.871nF
Gate Charge (Qg) (Max) @ Vgs 165pF
FET Type 1个N沟道
Product Line Semiconductors
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