HN3C51F-GR(TE85L,F
| Part Number | HN3C51F-GR(TE85L,F |
| Category | Transistors |
| Description | TRANS 2NPN 120V 0.1A SM6 |
| Brand | Toshiba Semiconductor and Storage |
HN3C51F-GR(TE85L,F Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | HN3C51F-GR(TE85L,F PCB Footprint and Symbol |
| Product Line | Semiconductors |
| Subcategory | Bipolar (BJT) - Arrays |
| Series | - |
| Transistor Type | 2 NPN (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Power - Max | 300mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-74, SOT-457 |
| Supplier Device Package | SM6 |
| part_number_key_clear | HN3C51FGRTE85LF |
Quick Inquiry
| In Stock | 352 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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