GT60N321(Q)
| Part Number | GT60N321(Q) |
| Manufacturer | Toshiba Semiconductor and Storage |
| Category | Transistors |
| Description | IGBT 1000V 60A 170W TO3P LH |
GT60N321(Q) Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | GT60N321(Q) PCB Footprint and Symbol |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Brand | Toshiba Semiconductor and Storage |
| Product Line | Semiconductors |
| Subcategory | IGBTs - Single |
| Series | - |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1000V |
| Current - Collector (Ic) (Max) | 60A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 170W |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | - |
| Td (on/off) @ 25°C | 330ns/700ns |
| Test Condition | - |
| Reverse Recovery Time (trr) | 2.5µs |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
Quick Inquiry
| In Stock | 403 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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