EPC2102ENG
| Part Number | EPC2102ENG |
| Manufacturer | EPC |
| Category | Transistors |
| Description | GAN TRANS 2N-CH 60V BUMPED DIE |
EPC2102ENG Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2102ENG PCB Footprint and Symbol |
| Brand | EPC |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | eGaN® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 23A |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 7mA |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 30V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
Quick Inquiry
| In Stock | 378 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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