EPC2100ENG
| Part Number | EPC2100ENG |
| Manufacturer | EPC |
| Category | Transistors |
| Description | GAN TRANS 2N-CH 30V BUMPED DIE |
EPC2100ENG Specifications
| RoHS | No RoHS Information |
| EDA/CAD Models | EPC2100ENG PCB Footprint and Symbol |
| Brand | EPC |
| Product Line | Semiconductors |
| Subcategory | FETs, MOSFETs - Arrays |
| Series | eGaN® |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
Quick Inquiry
| In Stock | 139 - More on Order |
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Please fill out the form below. We will contact you as soon as possible.
Add to cart
You can first add the current product to the shopping cart and then make a one-time inquiry.