| RoHS |
No RoHS Information
|
| EDA/CAD Models |
2N5014S PCB Footprint and Symbol |
| Brand |
Microsemi |
| Product Line |
Semiconductors |
| Subcategory |
Bipolar (BJT) - Single |
| Series |
Military, MIL-PRF-19500/727 |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
200mA |
| Voltage - Collector Emitter Breakdown (Max) |
900V |
| Vce Saturation (Max) @ Ib, Ic |
1.6V @ 5mA, 20mA |
| Current - Collector Cutoff (Max) |
10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 20mA, 10V |
| Power - Max |
1W |
| Frequency - Transition |
- |
| Operating Temperature |
-65°C ~ 200°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package |
TO-39 (TO-205AD) |
| part_number_key_clear |
2N5014S |
