FETs, MOSFETs - Single

Showing 41-60 of 29,932 items.

Part Number	Description	In Stock
NTR4101PT1G ON Semiconductor	Transistors-FETs, MOSFETs - Single MOSFET P-CH 20V 1.8A SOT-23 Manufacturer : ON Semiconductor Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 20V Current - Continuous Drain (Id) @ 25°C : 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V Rds On (Max) @ Id, Vgs : 85mOhm @ 1.6A, 4.5V Vgs(th) (Max) @ Id : 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 8.5nC @ 4.5V Vgs (Max) : ±8V Input Capacitance (Ciss) (Max) @ Vds : 675pF @ 10V Power Dissipation (Max) : 420mW (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 (TO-236) Package / Case : TO-236-3, SC-59, SOT-23-3	118533 More on Order
STW4N150 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 4A TO-247 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 4A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7Ohm @ 2A, 10V Vgs(th) (Max) @ Id : 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 50nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V Power Dissipation (Max) : 160W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-247-3 Package / Case : TO-247-3	3635 More on Order
NDS8410 Texas Instruments	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 10A 8-SOIC Manufacturer : Texas Instruments Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 15mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 60nC @ 10V Vgs (Max) : 20V Input Capacitance (Ciss) (Max) @ Vds : 1350pF @ 15V Power Dissipation (Max) : 2.5W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-SOIC Package / Case : 8-SOIC (0.154", 3.90mm Width)	456 More on Order
ZXM64P03XTA Diodes Incorporated	Transistors-FETs, MOSFETs - Single MOSFET P-CH 30V 3.8A 8-MSOP Manufacturer : Diodes Incorporated Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 75mOhm @ 2.4A, 10V Vgs(th) (Max) @ Id : 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 46nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 825pF @ 25V Power Dissipation (Max) : 1.1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : 8-MSOP Package / Case : 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	2940 More on Order
STH3N150-2 STMicroelectronics	Transistors-FETs, MOSFETs - Single MOSFET N-CH 1500V 2.5A H2PAK-2 Manufacturer : STMicroelectronics Warranty : Up to 1 year [Limited-Warranty]* Series : PowerMESH™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 1500V Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 9Ohm @ 1.3A, 10V Vgs(th) (Max) @ Id : 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 29.3nC @ 10V Vgs (Max) : ±30V Input Capacitance (Ciss) (Max) @ Vds : 939pF @ 25V Power Dissipation (Max) : 140W (Tc) Operating Temperature : 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : H²PAK Package / Case : TO-263-3, D²Pak (2 Leads + Tab) Variant	7797 More on Order
IRF1407PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 130A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 75V Current - Continuous Drain (Id) @ 25°C : 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7.8mOhm @ 78A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 250nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5600pF @ 25V Power Dissipation (Max) : 330W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	2668 More on Order
IRF9Z34NPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET P-CH 55V 19A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 100mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 35nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 620pF @ 25V Power Dissipation (Max) : 68W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	18756 More on Order
SI2300DS-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 30V 3.6A SOT-23 Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 30V Current - Continuous Drain (Id) @ 25°C : 3.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V Rds On (Max) @ Id, Vgs : 68mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id : 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 10nC @ 10V Vgs (Max) : ±12V Input Capacitance (Ciss) (Max) @ Vds : 320pF @ 15V Power Dissipation (Max) : 1.1W (Ta), 1.7W (Tc) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-23-3 (TO-236) Package / Case : TO-236-3, SC-59, SOT-23-3	115120 More on Order
IRLL014NTRPBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 2A SOT223 Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 55V Current - Continuous Drain (Id) @ 25°C : 2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V Rds On (Max) @ Id, Vgs : 140mOhm @ 2A, 10V Vgs(th) (Max) @ Id : 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V Vgs (Max) : ±16V Input Capacitance (Ciss) (Max) @ Vds : 230pF @ 25V Power Dissipation (Max) : 1W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : SOT-223 Package / Case : TO-261-4, TO-261AA	43528 More on Order
IRF2807PBF Infineon Technologies	Transistors-FETs, MOSFETs - Single MOSFET N-CH 75V 82A TO-220AB Manufacturer : Infineon Technologies Warranty : Up to 1 year [Limited-Warranty]* Series : HEXFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 75V Current - Continuous Drain (Id) @ 25°C : 82A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 13mOhm @ 43A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 160nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 3820pF @ 25V Power Dissipation (Max) : 230W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	2191 More on Order
IRF9540PBF Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET P-CH 100V 19A TO-220AB Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* FET Type : P-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 100V Current - Continuous Drain (Id) @ 25°C : 19A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 200mOhm @ 11A, 10V Vgs(th) (Max) @ Id : 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 61nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V Power Dissipation (Max) : 150W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220AB Package / Case : TO-220-3	3850 More on Order
SI7850DP-T1-GE3 Vishay Siliconix	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V 6.2A PPAK SO-8 Manufacturer : Vishay Siliconix Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchFET® FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V Rds On (Max) @ Id, Vgs : 22mOhm @ 10.3A, 10V Vgs(th) (Max) @ Id : 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs : 27nC @ 10V Vgs (Max) : ±20V Power Dissipation (Max) : 1.8W (Ta) Operating Temperature : -55°C ~ 150°C (TJ) Mounting Type : Surface Mount Supplier Device Package : PowerPAK® SO-8 Package / Case : PowerPAK® SO-8	24823 More on Order
CA/JCOP/MF4K/4B-UZ NXP	Transistors-FETs, MOSFETs - Single CA/JCOP/MF4K/4B-UZ Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Series : *	434 More on Order
BUK7Y25-80E/GFX NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchMOS™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V Power Dissipation (Max) : 95W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : LFPAK56, Power-SO8 Package / Case : SC-100, SOT-669	405 More on Order
BUK7Y25-80E/CX NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchMOS™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 80V Current - Continuous Drain (Id) @ 25°C : 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 25mOhm @ 10A, 10V Vgs(th) (Max) @ Id : 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 25.9nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 1800pF @ 25V Power Dissipation (Max) : 95W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : LFPAK56, Power-SO8 Package / Case : SC-100, SOT-669	132 More on Order
BUK7Y25-60E/GFX NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH LFPAK Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Series : *	492 More on Order
BUK761R7-40E/GFJ NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH D2PAK Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Series : * Drive Voltage (Max Rds On, Min Rds On) : 10V Vgs (Max) : ±20V Mounting Type : Surface Mount Supplier Device Package : D2PAK Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	118 More on Order
PSMN7R6-60XSQ NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH 60V TO220AB Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 60V Current - Continuous Drain (Id) @ 25°C : 51.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 7.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id : 4.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 38.7nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 2651pF @ 30V Power Dissipation (Max) : 46W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : TO-220F Package / Case : TO-220-3 Full Pack, Isolated Tab	163 More on Order
BUK761R5-40EJ NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH 40V 120A D2PAK Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Series : TrenchMOS™ FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 40V Current - Continuous Drain (Id) @ 25°C : 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 1.51mOhm @ 25A, 10V Vgs(th) (Max) @ Id : 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 145nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 11340pF @ 25V Power Dissipation (Max) : 349W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Surface Mount Supplier Device Package : D2PAK Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	119 More on Order
PSMN8R5-108ESQ NXP	Transistors-FETs, MOSFETs - Single MOSFET N-CH 108V 100A I2PAK Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* FET Type : N-Channel Technology : MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) : 108V Current - Continuous Drain (Id) @ 25°C : 100A (Tj) Drive Voltage (Max Rds On, Min Rds On) : 10V Rds On (Max) @ Id, Vgs : 8.5mOhm @ 25A, 10V Vgs(th) (Max) @ Id : 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs : 111nC @ 10V Vgs (Max) : ±20V Input Capacitance (Ciss) (Max) @ Vds : 5512pF @ 50V Power Dissipation (Max) : 263W (Tc) Operating Temperature : -55°C ~ 175°C (TJ) Mounting Type : Through Hole Supplier Device Package : I2PAK Package / Case : TO-262-3 Long Leads, I²Pak, TO-262AA	306 More on Order