| ISP25DP06LMSATMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V SOT223-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 250mOhm @ 1.9A, 10V
- Vgs(th) (Max) @ Id : 2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs : 13.9nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 30V
- Power Dissipation (Max) : 1.8W (Ta), 5W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : PG-SOT223
- Package / Case : TO-261-3
- part_number_key_clear : ISP25DP06LMSATMA1
| 255 More on Order |
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| ISP13DP06NMSATMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V SOT223-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Mounting Type : Surface Mount
- Supplier Device Package : PG-SOT223
- Package / Case : TO-261-3
- part_number_key_clear : ISP13DP06NMSATMA1
| 291 More on Order |
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| IPD950P06NMSAUMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Mounting Type : Surface Mount
- Supplier Device Package : PG-TO252-3-313
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
- part_number_key_clear : IPD950P06NMSAUMA1
| 268 More on Order |
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| IPD650P06NMSAUMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 65mOhm @ 22A, 10V
- Vgs(th) (Max) @ Id : 4V @ 1.04mA
- Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 30V
- Power Dissipation (Max) : 83W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : PG-TO252-3-313
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
- part_number_key_clear : IPD650P06NMSAUMA1
| 202 More on Order |
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| IPD390P06NMSAUMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Mounting Type : Surface Mount
- Supplier Device Package : PG-TO252-3-313
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
- part_number_key_clear : IPD390P06NMSAUMA1
| 427 More on Order |
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| IPD26DP06NMSAUMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Mounting Type : Surface Mount
- Supplier Device Package : PG-TO252-3-313
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
- part_number_key_clear : IPD26DP06NMSAUMA1
| 376 More on Order |
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| IPD25DP06LMSAUMA1 Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET P-CH 60V TO252-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : OptiMOS™
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 6.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 250mOhm @ 6.5A, 10V
- Vgs(th) (Max) @ Id : 2V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs : 13.8nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 420pF @ 30V
- Power Dissipation (Max) : 28W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Surface Mount
- Supplier Device Package : PG-TO252-3-313
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
- part_number_key_clear : IPD25DP06LMSAUMA1
| 177 More on Order |
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| AUXDILZ24NS Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH D2PAK - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- part_number_key_clear : AUXDILZ24NS
| 299 More on Order |
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| 2N7000-AP Micro Commercial Co | Transistors-FETs, MOSFETs - Single TRANS NPN TO-92 - Manufacturer : Micro Commercial Co
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 200mA
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 5Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id : 3V @ 1mA
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 60pF @ 25V
- Power Dissipation (Max) : 625mW (Ta)
- Operating Temperature : -55°C ~ 150°C
- Mounting Type : Through Hole
- Supplier Device Package : TO-92
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- part_number_key_clear : 2N7000AP
| 155 More on Order |
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| TSM680P06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 68mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 870pF @ 30V
- Power Dissipation (Max) : 42W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
- part_number_key_clear : TSM680P06CZC0G
| 263 More on Order |
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| TSM680P06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 68mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 870pF @ 30V
- Power Dissipation (Max) : 17W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
- part_number_key_clear : TSM680P06CIC0G
| 107 More on Order |
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| TSM480P06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 48mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 22.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 30V
- Power Dissipation (Max) : 66W (Tc)
- Operating Temperature : -50°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
- part_number_key_clear : TSM480P06CZC0G
| 459 More on Order |
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| TSM480P06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 48mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id : 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 22.4nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1250pF @ 30V
- Power Dissipation (Max) : 27W (Tc)
- Operating Temperature : -50°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
- part_number_key_clear : TSM480P06CIC0G
| 156 More on Order |
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| TSM340N06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 34mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.6nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1180pF @ 30V
- Power Dissipation (Max) : 66W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
- part_number_key_clear : TSM340N06CZC0G
| 308 More on Order |
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| TSM340N06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 34mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 16.6nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1180pF @ 30V
- Power Dissipation (Max) : 27W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
- part_number_key_clear : TSM340N06CIC0G
| 103 More on Order |
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| TSM230N06CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 25V
- Power Dissipation (Max) : 104W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
- part_number_key_clear : TSM230N06CZC0G
| 238 More on Order |
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| TSM230N06CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 60V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 23mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 28nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1680pF @ 25V
- Power Dissipation (Max) : 42W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
- part_number_key_clear : TSM230N06CIC0G
| 265 More on Order |
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| TSM22P10CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 140mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
- Vgs (Max) : ±25V
- Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 30V
- Power Dissipation (Max) : 125W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
- part_number_key_clear : TSM22P10CZC0G
| 129 More on Order |
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| TSM22P10CI C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET P-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : P-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
- Rds On (Max) @ Id, Vgs : 140mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id : 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
- Vgs (Max) : ±25V
- Input Capacitance (Ciss) (Max) @ Vds : 2250pF @ 30V
- Power Dissipation (Max) : 48W (Tc)
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : ITO-220
- Package / Case : TO-220-3 Full Pack, Isolated Tab
- part_number_key_clear : TSM22P10CIC0G
| 425 More on Order |
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| TSM10N60CZ C0G Taiwan Semiconductor Corporation | Transistors-FETs, MOSFETs - Single MOSFET N-CHANNEL - Manufacturer : Taiwan Semiconductor Corporation
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 600V
- Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 45.8nC @ 10V
- Vgs (Max) : ±30V
- Input Capacitance (Ciss) (Max) @ Vds : 1738pF @ 25V
- Power Dissipation (Max) : 166W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220
- Package / Case : TO-220-3
- part_number_key_clear : TSM10N60CZC0G
| 419 More on Order |
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