Bipolar (BJT) - Single, Pre-Biased

Showing 41-60 of 3,282 items.

Part Number	Description	In Stock
PDTA123ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PDTA123ES126	424 More on Order
PDTA115TS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PDTA115TS126	328 More on Order
PDTA115ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 20mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 100 kOhms Resistor - Emitter Base (R2) : 100 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PDTA115ES126	102 More on Order
PDTA114YS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10 kOhms Resistor - Emitter Base (R2) : 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 100mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 1µA Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PDTA114YS126	362 More on Order
PDTA113ZS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PDTA113ZS126	220 More on Order
PDTA113ZK,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 35 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SMT3; MPAK part_number_key_clear : PDTA113ZK115	432 More on Order
PDTA113ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 40mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 1.5mA, 30mA Current - Collector Cutoff (Max) : 1µA Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PDTA113ES126	236 More on Order
PDTA113EK,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 250MW SMT3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 40mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 1.5mA, 30mA Current - Collector Cutoff (Max) : 1µA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SMT3; MPAK part_number_key_clear : PDTA113EK115	452 More on Order
PBRP123YS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRP123YS126	463 More on Order
PBRP123ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRP123ES126	335 More on Order
PBRP113ZS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRP113ZS126	106 More on Order
PBRP113ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS PNP 500MW TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : PNP - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 1 kOhms Power - Max : 500mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRP113ES126	452 More on Order
PBRN123YS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 700mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRN123YS126	332 More on Order
PBRN123YK,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 600mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SMT3; MPAK part_number_key_clear : PBRN123YK115	438 More on Order
PBRN123ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 700mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRN123ES126	155 More on Order
PBRN123EK,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 600mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 2.2 kOhms Resistor - Emitter Base (R2) : 2.2 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 280 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SMT3; MPAK part_number_key_clear : PBRN123EK115	239 More on Order
PBRN113ZS,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 700mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRN113ZS126	420 More on Order
PBRN113ZK,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 600mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 500 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SMT3; MPAK part_number_key_clear : PBRN113ZK115	412 More on Order
PBRN113ES,126 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 0.7W TO92-3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 800mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 700mW Mounting Type : Through Hole Package / Case : TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Supplier Device Package : TO-92-3 part_number_key_clear : PBRN113ES126	232 More on Order
PBRN113EK,115 NXP	Transistors-Bipolar (BJT) - Single, Pre-Biased TRANS PREBIAS NPN 250MW SMT3 Manufacturer : NXP Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : NPN - Pre-Biased Current - Collector (Ic) (Max) : 600mA Voltage - Collector Emitter Breakdown (Max) : 40V Resistor - Base (R1) : 1 kOhms Resistor - Emitter Base (R2) : 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 180 @ 300mA, 5V Vce Saturation (Max) @ Ib, Ic : 1.15V @ 8mA, 800mA Current - Collector Cutoff (Max) : 500nA Power - Max : 250mW Mounting Type : Surface Mount Package / Case : TO-236-3, SC-59, SOT-23-3 Supplier Device Package : SMT3; MPAK part_number_key_clear : PBRN113EK115	211 More on Order