Transistors

Showing 63,601-63,610 of 64,460 items.

Part Number	Description	In Stock
PBLS4005D,115 Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 0.6W 6TSOP Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max) : 100mA, 700mA Voltage - Collector Emitter Breakdown (Max) : 50V, 40V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 5V / 300 @ 100mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 310mV @ 100mA, 1A Current - Collector Cutoff (Max) : 1µA, 100nA Frequency - Transition : 150MHz Power - Max : 600mW Mounting Type : Surface Mount Package / Case : SC-74, SOT-457 Supplier Device Package : 6-TSOP	4044 More on Order
PEMB11,115 Nexperia	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.3W SOT666 Manufacturer : Nexperia Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 1µA Frequency - Transition : 180MHz Power - Max : 300mW Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666 Supplier Device Package : SOT-666	14866 More on Order
RN4902,LF(CT Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	4748 More on Order
EMB75T2R Rohm Semiconductor	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 Manufacturer : Rohm Semiconductor Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz Power - Max : 150mW Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666 Supplier Device Package : EMT6	12978 More on Order
RN2906,LF Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.2W US6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 200MHz Power - Max : 200mW Mounting Type : Surface Mount Package / Case : 6-TSSOP, SC-88, SOT-363 Supplier Device Package : US6	4154 More on Order
RN4902FE,LF(CT Toshiba Semiconductor and Storage	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN/PNP PREBIAS 0.1W ES6 Manufacturer : Toshiba Semiconductor and Storage Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA Current - Collector Cutoff (Max) : 500nA Frequency - Transition : 250MHz, 200MHz Power - Max : 100mW Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666 Supplier Device Package : ES6	4892 More on Order
DMG964060R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SSMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 4.7kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 125mW Mounting Type : Surface Mount Package / Case : SOT-563, SOT-666 Supplier Device Package : SSMini6-F3-B	11565 More on Order
DMC5640M0R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL NPN SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 2.2kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	4444 More on Order
DMG564030R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 47kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	4027 More on Order
DMG564040R Panasonic Electronic Components	Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS NPN/PNP SMINI6 Manufacturer : Panasonic Electronic Components Warranty : Up to 1 year [Limited-Warranty]* Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max) : 100mA Voltage - Collector Emitter Breakdown (Max) : 50V Resistor - Base (R1) : 10kOhms Resistor - Emitter Base (R2) : 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA Current - Collector Cutoff (Max) : 500nA Power - Max : 150mW Mounting Type : Surface Mount Package / Case : 6-SMD, Flat Leads Supplier Device Package : SMini6-F3-B	16907 More on Order