| EMH6T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 14137 More on Order |
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| EMB2T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2PNP PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 10829 More on Order |
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| EMG8T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-SMD (5 Leads), Flat Lead
- Supplier Device Package : EMT5
| 26732 More on Order |
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| EMH2T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : SOT-563, SOT-666
- Supplier Device Package : EMT6
| 42941 More on Order |
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| EMG5T2R Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W EMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-SMD (5 Leads), Flat Lead
- Supplier Device Package : EMT5
| 13962 More on Order |
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| UMB10NTN Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 2.2kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : UMT6
| 3787 More on Order |
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| UMG4NTR Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS 2NPN PREBIAS 0.15W UMT5 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package : UMT5
| 7984 More on Order |
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| IMB11AT110 Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP SMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 10kOhms
- Resistor - Emitter Base (R2) : 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : SC-74, SOT-457
- Supplier Device Package : SMT6
| 3686 More on Order |
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| PBLS4002Y,115 Nexperia | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS NPN PREBIAS/PNP 6TSSOP - Manufacturer : Nexperia
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max) : 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) : 50V, 40V
- Resistor - Base (R1) : 4.7kOhms
- Resistor - Emitter Base (R2) : 4.7kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 10mA, 5V / 150 @ 100mA, 2V
- Vce Saturation (Max) @ Ib, Ic : 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max) : 1µA
- Frequency - Transition : 300MHz
- Power - Max : 300mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : 6-TSSOP
| 4112 More on Order |
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| UMB2NTN Rohm Semiconductor | Transistors-Bipolar (BJT) - Arrays, Pre-Biased TRANS PREBIAS DUAL PNP UMT6 - Manufacturer : Rohm Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- Transistor Type : 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max) : 100mA
- Voltage - Collector Emitter Breakdown (Max) : 50V
- Resistor - Base (R1) : 47kOhms
- Resistor - Emitter Base (R2) : 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce : 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max) : 500nA
- Frequency - Transition : 250MHz
- Power - Max : 150mW
- Mounting Type : Surface Mount
- Package / Case : 6-TSSOP, SC-88, SOT-363
- Supplier Device Package : UMT6
| 3855 More on Order |
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