| STGB19NC60KDT4 STMicroelectronics | Transistors-IGBTs - Single IGBT 600V 35A 125W D2PAK - Manufacturer : STMicroelectronics
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : PowerMESH™
- Voltage - Collector Emitter Breakdown (Max) : 600V
- Current - Collector (Ic) (Max) : 35A
- Current - Collector Pulsed (Icm) : 75A
- Vce(on) (Max) @ Vge, Ic : 2.75V @ 15V, 12A
- Power - Max : 125W
- Switching Energy : 165µJ (on), 255µJ (off)
- Input Type : Standard
- Gate Charge : 55nC
- Td (on/off) @ 25°C : 30ns/105ns
- Test Condition : 480V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr) : 31ns
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package : D2PAK
| 132 More on Order |
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| IRFZ44NPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 49A TO-220AB - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 49A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 17.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1470pF @ 25V
- Power Dissipation (Max) : 94W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 3739 More on Order |
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| IRFP064NPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 55V 110A TO-247AC - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 55V
- Current - Continuous Drain (Id) @ 25°C : 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 8mOhm @ 59A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 25V
- Power Dissipation (Max) : 200W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247AC
- Package / Case : TO-247-3
| 16682 More on Order |
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| IHW20N135R5XKSA1 Infineon Technologies | Transistors-IGBTs - Single IGBT 1350V 40A 288W TO247 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchStop®
- Voltage - Collector Emitter Breakdown (Max) : 1350V
- Current - Collector (Ic) (Max) : 40A
- Current - Collector Pulsed (Icm) : 60A
- Vce(on) (Max) @ Vge, Ic : 1.85V @ 15V, 20A
- Power - Max : 288W
- Switching Energy : 950µJ (off)
- Input Type : Standard
- Gate Charge : 170nC
- Td (on/off) @ 25°C : -/235ns
- Test Condition : 600V, 20A, 10Ohm, 15V
- Operating Temperature : -40°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Package / Case : TO-247-3
- Supplier Device Package : PG-TO247-3
| 1136 More on Order |
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| IRG4RC10SDTRPBF Infineon Technologies | Transistors-IGBTs - Single IGBT 600V 14A 38W DPAK - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Voltage - Collector Emitter Breakdown (Max) : 600V
- Current - Collector (Ic) (Max) : 14A
- Current - Collector Pulsed (Icm) : 18A
- Vce(on) (Max) @ Vge, Ic : 1.8V @ 15V, 8A
- Power - Max : 38W
- Switching Energy : 310µJ (on), 3.28mJ (off)
- Input Type : Standard
- Gate Charge : 15nC
- Td (on/off) @ 25°C : 76ns/815ns
- Test Condition : 480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr) : 28ns
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Surface Mount
- Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package : D-Pak
| 127 More on Order |
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| IRFP260NPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 200V 50A TO-247AC - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 200V
- Current - Continuous Drain (Id) @ 25°C : 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 40mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 234nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 4057pF @ 25V
- Power Dissipation (Max) : 300W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247AC
- Package / Case : TO-247-3
| 10127 More on Order |
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| IRFP150NPBF Infineon Technologies | Transistors-FETs, MOSFETs - Single MOSFET N-CH 100V 42A TO-247AC - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : HEXFET®
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 100V
- Current - Continuous Drain (Id) @ 25°C : 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 36mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 110nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1900pF @ 25V
- Power Dissipation (Max) : 160W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-247AC
- Package / Case : TO-247-3
| 3487 More on Order |
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| IRF740PBF Vishay Siliconix | Transistors-FETs, MOSFETs - Single MOSFET N-CH 400V 10A TO-220AB - Manufacturer : Vishay Siliconix
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 400V
- Current - Continuous Drain (Id) @ 25°C : 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 10V
- Rds On (Max) @ Id, Vgs : 550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id : 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 63nC @ 10V
- Vgs (Max) : ±20V
- Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
- Power Dissipation (Max) : 125W (Tc)
- Operating Temperature : -55°C ~ 150°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : TO-220AB
- Package / Case : TO-220-3
| 2604 More on Order |
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| IKP20N60TXKSA1 Infineon Technologies | Transistors-IGBTs - Single IGBT 600V 40A 166W TO220-3 - Manufacturer : Infineon Technologies
- Warranty : Up to 1 year [Limited-Warranty]*
- Series : TrenchStop®
- IGBT Type : Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) : 600V
- Current - Collector (Ic) (Max) : 40A
- Current - Collector Pulsed (Icm) : 60A
- Vce(on) (Max) @ Vge, Ic : 2.05V @ 15V, 20A
- Power - Max : 166W
- Switching Energy : 770µJ
- Input Type : Standard
- Gate Charge : 120nC
- Td (on/off) @ 25°C : 18ns/199ns
- Test Condition : 400V, 20A, 12Ohm, 15V
- Reverse Recovery Time (trr) : 41ns
- Operating Temperature : -40°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Package / Case : TO-220-3
- Supplier Device Package : PG-TO220-3
| 788 More on Order |
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| RFD14N05L ON Semiconductor | Transistors-FETs, MOSFETs - Single MOSFET N-CH 50V 14A I-PAK - Manufacturer : ON Semiconductor
- Warranty : Up to 1 year [Limited-Warranty]*
- FET Type : N-Channel
- Technology : MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) : 50V
- Current - Continuous Drain (Id) @ 25°C : 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) : 5V
- Rds On (Max) @ Id, Vgs : 100mOhm @ 14A, 5V
- Vgs(th) (Max) @ Id : 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs : 40nC @ 10V
- Vgs (Max) : ±10V
- Input Capacitance (Ciss) (Max) @ Vds : 670pF @ 25V
- Power Dissipation (Max) : 48W (Tc)
- Operating Temperature : -55°C ~ 175°C (TJ)
- Mounting Type : Through Hole
- Supplier Device Package : I-PAK
- Package / Case : TO-251-3 Short Leads, IPak, TO-251AA
| 6695 More on Order |
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